发明名称 Manufacturing method of nitride crystalline film, nitride film and substrate structure
摘要 A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.
申请公布号 US8173462(B2) 申请公布日期 2012.05.08
申请号 US20090399036 申请日期 2009.03.06
申请人 KUO CHENG-HUANG;KUO CHI-WEN;TUN CHUN-JU;NATIONAL CENTRAL UNIVERSITY 发明人 KUO CHENG-HUANG;KUO CHI-WEN;TUN CHUN-JU
分类号 H01L21/306;H01L21/465 主分类号 H01L21/306
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