发明名称 |
Silicon carbide based porous material and method for production thereof |
摘要 |
A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss. |
申请公布号 |
US8173054(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20080210434 |
申请日期 |
2008.09.15 |
申请人 |
TABUCHI YUUICHIROU;FURUKAWA MASAHIRO;MORIMOTO KENJI;KAWASAKI SHINJI;NGK INSULATORS, LTD. |
发明人 |
TABUCHI YUUICHIROU;FURUKAWA MASAHIRO;MORIMOTO KENJI;KAWASAKI SHINJI |
分类号 |
C04B33/32;B01D39/20;B01D46/24;B01D53/94;B01J35/04;C04B38/06;F01N3/022;F01N3/28 |
主分类号 |
C04B33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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