发明名称 Silicon carbide based porous material and method for production thereof
摘要 A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss.
申请公布号 US8173054(B2) 申请公布日期 2012.05.08
申请号 US20080210434 申请日期 2008.09.15
申请人 TABUCHI YUUICHIROU;FURUKAWA MASAHIRO;MORIMOTO KENJI;KAWASAKI SHINJI;NGK INSULATORS, LTD. 发明人 TABUCHI YUUICHIROU;FURUKAWA MASAHIRO;MORIMOTO KENJI;KAWASAKI SHINJI
分类号 C04B33/32;B01D39/20;B01D46/24;B01D53/94;B01J35/04;C04B38/06;F01N3/022;F01N3/28 主分类号 C04B33/32
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