| 摘要 |
PURPOSE: A phase change memory device is provided to improve a current property by reducing a standby current in a standby section and a non-operation section. CONSTITUTION: A cell array includes a plurality of memory cells. A write driver provides a set or reset pulse to a selected memory cell of a cell array. A controller(200) controls the selection of the memory cell and a write driver. If a write voltage supplied from the write driver rises, the controller holds the signals supplied to the cell array until the write voltage approaches a preset voltage level for a write operation.
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