发明名称 |
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove |
摘要 |
A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. |
申请公布号 |
US8175129(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20100837209 |
申请日期 |
2010.07.15 |
申请人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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