发明名称 |
Low power, single poly EEPROM cell with voltage divider |
摘要 |
An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIGS. 7 and 8) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (806) coupled to receive a first program voltage (PGMDATA) and a first select signal (ROWSEL). A voltage divider (804) is coupled in series with the switch. A sense transistor (152) has a sense control terminal (156) and a current path coupled between an output terminal (108) and a reference terminal (110). A first capacitor (154) has a first terminal coupled to the switch and a second terminal coupled to the sense control terminal. An access transistor (716) has a control terminal coupled to receive a read signal (721), and a current path coupled between the output terminal and a bit line (718). |
申请公布号 |
US8174884(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20100804395 |
申请日期 |
2010.07.20 |
申请人 |
STIEGLER HARVEY J.;MITCHELL ALLAN T.;ROUNTREE ROBERT N.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
STIEGLER HARVEY J.;MITCHELL ALLAN T.;ROUNTREE ROBERT N. |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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