| 摘要 |
The present invention provides a semiconductor device which includes a thin film transistor as a resistance element, wherein a variation in resistance of the thin film transistor is suppressed without increasing an area of the resistance element and the resistance element can be produced through simplified production steps. The semiconductor device of the present invention is a semiconductor device including a first thin film transistor and a second thin film transistor on a substrate, the first thin film transistor being used as a resistance element, the second thin film transistor including a semiconductor layer having a low concentration drain region and a high concentration drain region, the low concentration drain region and the high concentration drain region being different in impurity concentration, wherein an impurity concentration of a channel region of a semiconductor layer in the first thin film transistor is the same as an impurity concentration of the low concentration drain region of the semiconductor layer in the second thin film transistor. |
