发明名称 |
Semiconductor light emitting device including porous layer |
摘要 |
A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP. |
申请公布号 |
US8174025(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20060423413 |
申请日期 |
2006.06.09 |
申请人 |
EPLER JOHN E.;KRAMES MICHAEL R.;ZHAO HANMIN;KIM JAMES C.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
EPLER JOHN E.;KRAMES MICHAEL R.;ZHAO HANMIN;KIM JAMES C. |
分类号 |
H01L27/15;H01L33/00;H01L33/06;H01L33/16;H01L33/20;H01L33/22;H01L33/30 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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