发明名称 Semiconductor device and manufacturing method thereof and method for writing memory element
摘要 An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic compound layer between first and second conductive layers. When melting, an organic compound of the organic compound layer aggregates due to surface tension of the organic compound. By applying a voltage to the first and second conductive layers, writing to the memory element is carried out.
申请公布号 US8174006(B2) 申请公布日期 2012.05.08
申请号 US20100874574 申请日期 2010.09.02
申请人 YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 H01L35/24 主分类号 H01L35/24
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