发明名称 Lithographic apparatus with adjusted exposure slit shape enabling reduction of focus errors due to substrate topology and device manufacturing method
摘要 A lithographic apparatus includes an illumination system to condition a radiation beam; a patterning device support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate, and a projection system to project the patterned radiation beam in a scanning exposure along a scanning direction onto a target portion of the substrate. The illumination system is configured to form in a plane of the patterning device a slit shaped image. The slit shaped image has a curved shape with a slit curvature in the scanning direction, with a length in the scanning direction and a width perpendicular to the scanning direction. The slit shaped image is configured to create a curved pattern image portion of the patterned radiation beam in an image plane of the projection system.
申请公布号 US8174678(B2) 申请公布日期 2012.05.08
申请号 US20080329076 申请日期 2008.12.05
申请人 MAGNUSSON SVEN GUNNAR KRISTER;DE NIVELLE MARTIN JULES MARIE-EMILE;STAALS FRANK;TEL WIM TJIBBO;ASML NETHERLANDS B.V. 发明人 MAGNUSSON SVEN GUNNAR KRISTER;DE NIVELLE MARTIN JULES MARIE-EMILE;STAALS FRANK;TEL WIM TJIBBO
分类号 G03B27/54;G03B27/32 主分类号 G03B27/54
代理机构 代理人
主权项
地址