发明名称 |
Lithographic apparatus with adjusted exposure slit shape enabling reduction of focus errors due to substrate topology and device manufacturing method |
摘要 |
A lithographic apparatus includes an illumination system to condition a radiation beam; a patterning device support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate, and a projection system to project the patterned radiation beam in a scanning exposure along a scanning direction onto a target portion of the substrate. The illumination system is configured to form in a plane of the patterning device a slit shaped image. The slit shaped image has a curved shape with a slit curvature in the scanning direction, with a length in the scanning direction and a width perpendicular to the scanning direction. The slit shaped image is configured to create a curved pattern image portion of the patterned radiation beam in an image plane of the projection system. |
申请公布号 |
US8174678(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20080329076 |
申请日期 |
2008.12.05 |
申请人 |
MAGNUSSON SVEN GUNNAR KRISTER;DE NIVELLE MARTIN JULES MARIE-EMILE;STAALS FRANK;TEL WIM TJIBBO;ASML NETHERLANDS B.V. |
发明人 |
MAGNUSSON SVEN GUNNAR KRISTER;DE NIVELLE MARTIN JULES MARIE-EMILE;STAALS FRANK;TEL WIM TJIBBO |
分类号 |
G03B27/54;G03B27/32 |
主分类号 |
G03B27/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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