发明名称 Doped implant monitoring for microchip tamper detection
摘要 A method and apparatus include conductive material doped within a microchip that accumulates a detectable charge in the presence of ions. Such ions may result from a focused ion beam or other unwelcome technology exploitation effort. Circuitry sensing the charge buildup in the embedded, doped material may initiate a defensive action intended to defeat the tampering operation.
申请公布号 US8172140(B2) 申请公布日期 2012.05.08
申请号 US20080181401 申请日期 2008.07.29
申请人 BARTLEY GERALD K;BECKER DARRYL J.;CHRISTENSEN TODD A.;DAHLEN PAUL E.;GERMANN PHILIP R.;MAKI ANDREW B.;MAXSON MARK O.;SHEETS, II JOHN E.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BARTLEY GERALD K;BECKER DARRYL J.;CHRISTENSEN TODD A.;DAHLEN PAUL E.;GERMANN PHILIP R.;MAKI ANDREW B.;MAXSON MARK O.;SHEETS, II JOHN E.
分类号 G06K7/08 主分类号 G06K7/08
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