发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.</p> |
申请公布号 |
KR20120044977(A) |
申请公布日期 |
2012.05.08 |
申请号 |
KR20127001289 |
申请日期 |
2010.06.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;MIYAKE HIROYUKI;KUWABARA HIDEAKI;TERASHIMA MARI |
分类号 |
H01L29/786;G02F1/1368;H01L21/8234 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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