发明名称 Photoresist composition, method for forming a pattern using the same, and method for manufacturing thin film transistor array panel using the same
摘要 <p>A photoresist composition includes a novolac resin having where each of R1, R2, R3, and R4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having <?in-line-formulae description="In-line Formulae" end="lead"?>Z1-SH, or<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>SH-Z2-SH,<?in-line-formulae description="In-line Formulae" end="tail"?> where each of Z1 and Z2 is an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.</p>
申请公布号 KR101142999(B1) 申请公布日期 2012.05.08
申请号 KR20050010038 申请日期 2005.02.03
申请人 发明人
分类号 G03F7/004 主分类号 G03F7/004
代理机构 代理人
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