| 发明名称 |
Method of growing semiconductor heterostructures based on gallium nitride |
| 摘要 |
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x≰1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
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| 申请公布号 |
US8174042(B2) |
申请公布日期 |
2012.05.08 |
| 申请号 |
US201113182867 |
申请日期 |
2011.07.14 |
| 申请人 |
ABRAMOV VLADIMIR SEMENOVICH;SOSHCHIN NAUM PETROVICH;SUSHKOV VALERIY PETROVICH;SHCHERBAKOV NIKOLAY VALENTINOVICH;ALENKOV VLADIMIR VLADIMIROVICH;SAKHAROV SERGEI ALEKSANDROVICH;GORBYLEV VLADIMIR ALEKSANDROVICH;SEOUL SEMICONDUCTOR CO., LTD.;VLADIMIR SEMENOVICH ABRAMOV |
发明人 |
ABRAMOV VLADIMIR SEMENOVICH;SOSHCHIN NAUM PETROVICH;SUSHKOV VALERIY PETROVICH;SHCHERBAKOV NIKOLAY VALENTINOVICH;ALENKOV VLADIMIR VLADIMIROVICH;SAKHAROV SERGEI ALEKSANDROVICH;GORBYLEV VLADIMIR ALEKSANDROVICH |
| 分类号 |
H01L33/00;H01L33/04;C30B29/38;H01L33/32 |
主分类号 |
H01L33/00 |
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