发明名称 |
Method and device for producing semiconductor wafers of silicon |
摘要 |
Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface. |
申请公布号 |
US8172941(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20070002881 |
申请日期 |
2007.12.19 |
申请人 |
WEBER MARTIN;SCHMIDT HERBERT;VON AMMON WILFRIED;SILTRONIC AG |
发明人 |
WEBER MARTIN;SCHMIDT HERBERT;VON AMMON WILFRIED |
分类号 |
C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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