发明名称 Method of designing an etch stage measurement system
摘要 Provided is a method for designing an etch stage measurement system involving an etch process for one or more layers on a substrate using an etch process tool. The etch process tool uses two or more metrology devices, at least one etch process sensor device, and a metrology processor, the etch stage measurement system configured to meet two or more etch stage measurement objectives. A correlation algorithm using the etch stage measurements to the actual etch stage data is developed and used to extract etch measurement value. If the set two or more etch stage measurement objectives are not met, the optical metrology devices are modified, a different etch process sensor device is selected, the correlation algorithm is refined, and/or the measurement data is enhanced by adjusting for noise.
申请公布号 US8173450(B1) 申请公布日期 2012.05.08
申请号 US201113027227 申请日期 2011.02.14
申请人 TIAN XINKANG;MADRIAGA MANUEL;TOKYO ELECTRON LIMITED 发明人 TIAN XINKANG;MADRIAGA MANUEL
分类号 H01L21/00;G01R31/26;H01L21/302;H01L21/66 主分类号 H01L21/00
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