| 摘要 |
<p>PURPOSE: A thin film transistor and a method for manufacturing a flat display device with the same are provided to minimize damage of a device due to bending stress. CONSTITUTION: A gate electrode(21) is formed on a substrate(10). A gate insulating film(12,22) is formed on the gate electrode. Channel layers(14,24), ohmic contact layers(15,25), and source/drain electrodes(17a,17b,27a,27b) are formed on the gate insulating film. Passivation film patterns(31a,31b) surround the gate electrode, the gate insulating film, the channel layers, and the source/drain electrodes. The passivation film surrounds the passivation layer patterns.</p> |
