发明名称 |
Integrated circuit device with low capacitance and high thermal conductivity interface |
摘要 |
An integrated circuit device includes an integrated circuit formed in a semiconductor die and an integrated circuit package containing the semiconductor die. The integrated circuit package includes a thermal interface material substantially between the semiconductor die and a heat spreader of the integrated circuit device for conducting heat from the semiconductor die to the heat spreader. The thermal interface material includes diamond particles and has a thickness selected to reduce capacitance between the semiconductor die and the heat spreader over that of a conventional integrated circuit device without reducing the rate of thermal conduction from the semiconductor die to the heat spreader. As a result, the integrated circuit device has improved electrostatic discharge immunity.
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申请公布号 |
US8174112(B1) |
申请公布日期 |
2012.05.08 |
申请号 |
US20090544850 |
申请日期 |
2009.08.20 |
申请人 |
KARP JAMES;KIREEV VASSILI;XILINX, INC. |
发明人 |
KARP JAMES;KIREEV VASSILI |
分类号 |
H01L23/34 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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