发明名称 Semiconductor on insulator
摘要 A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.
申请公布号 US8173495(B2) 申请公布日期 2012.05.08
申请号 US20100911649 申请日期 2010.10.25
申请人 JIN BEEN-YIH;ARGHAVANI REZA;CHAU ROBERT;INTEL CORPORATION 发明人 JIN BEEN-YIH;ARGHAVANI REZA;CHAU ROBERT
分类号 H01L21/00;H01L21/20;H01L21/762 主分类号 H01L21/00
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