发明名称 |
Floating-gate structure with dielectric component |
摘要 |
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive portion includes a continuous component providing bulk conductivity to the floating gate. The dielectric portion is discontinuous within the conductive portion and may include islands of dielectric material and/or one or more contiguous layers of dielectric material having discontinuities. |
申请公布号 |
US8174061(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20090364809 |
申请日期 |
2009.02.03 |
申请人 |
MOULI CHANDRA;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
MOULI CHANDRA;SANDHU GURTEJ S. |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|