| 摘要 |
Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to pull the seed crystal. During pulling, a horizontal magnetic field positioning device applies a magnetic field in the horizontal direction to the inside of the silicon melt, fixing the magnetic field axis at a constant position from the liquid surface of the melt. Positional adjustment of the vertical position of the horizontal magnetic field is performed in advance by a magnetic field position adjusting device, and the magnetic field axis of the applied field is fixed at a constant distance lower than the liquid surface of the melt by more than 50 mm and at the same level or higher than a depth L from the melt surface at the point of tail-in. |
