发明名称 |
Method of manufacturing a light emitting diode element |
摘要 |
A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector. |
申请公布号 |
US8173456(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20090648308 |
申请日期 |
2009.12.29 |
申请人 |
TSAY JENQ-DAR;LIN SUH-FANG;CHANG YU-HSIANG;GUO YIH-DER;KUO SHENG-HUEI;KUO WEI-HUNG;LIU HSUN-CHIH;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
TSAY JENQ-DAR;LIN SUH-FANG;CHANG YU-HSIANG;GUO YIH-DER;KUO SHENG-HUEI;KUO WEI-HUNG;LIU HSUN-CHIH |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
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