Nonvolatile memory device, program method and precharge voltage boosting method thereof, and memory system including the nonvolatile memory device

摘要

A method of programming a nonvolatile memory device according to the present invention includes precharging bit lines according to data loaded in page buffers; electrically connecting the precharged bit lines to channels corresponding to the bit lines, respectively, to charge the channels; and applying a word line voltage for a program after charging the channels. A channel voltage boosting of each of the channels is determined according to data loaded in adjacent page buffers.