| 摘要 |
PURPOSE: A method for forming a metal wire of a semiconductor device is provided to prevent a void in a trench by delaying copper generation in a trench inlet. CONSTITUTION: An interlayer insulation layer(120) is formed on a semiconductor substrate. A trench is formed by patterning an interlayer insulation layer. A barrier metal layer(140) is formed on the upper side and trench of the interlayer insulation layer. A copper seed layer is formed on the barrier metal layer. A dielectric layer is formed on the copper seed layer. A copper wiring layer(170) fills the trench with copper by an electroplating process. A copper wiring layer is planarized by chemical and mechanical polishing process.
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