| 摘要 |
A rectifier is formed by forming a first electrode layer, a semiconductor layer and a second electrode layer. A third electrode layer is formed between the first electrode layer and the semiconductor layer, or between the second electrode layer and the semiconductor layer. The semiconductor layer and the third electrode layer are formed as follows. First, a first layer made from amorphous silicon and including a p-type first semiconductor region and an n-type second semiconductor region is deposited. Next, a second layer made from a metal is deposited on an upper or lower layer of the first layer. The third electrode layer including a metal silicide as a material lattice-matched to polysilicon is formed by siliciding the second layer. Next, the first layer is crystallized. Subsequently, the semiconductor layer is formed by activating an impurity included in the first layer and restoring crystal imperfections included in the first layer.
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