| 摘要 |
PURPOSE: A semiconductor device formation method is provided to improve properties of a semiconductor device by increasing uniformity of a device separation region and an active region in a process for arranging the active region of a cell region. CONSTITUTION: A cell open mask pattern for opening a cell region is formed on a peripheral circuit region. A first hard mask pattern(106a) is formed by etching a first hard mask layer with a spacer pattern as a mask. A second hard mask layer(114) is formed on the upper part of the first hard mask layer and the first hard mask pattern. A cutting mask pattern(118) is formed on the upper part of the second hard mask layer. An active region is formed on the cell region. A device separation region is formed on the peripheral circuit region.
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