发明名称 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD AND ERASE METHOD OF THE SAME
摘要 PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve the operation efficiency of a memory device by omitting an unnecessary verification operation in a section without a program or an erased memory cell. CONSTITUTION: A first program loop including a first program operation and a first program verification operation is repeated with regard to memory cells of a first page(S310). The number of operations of the first program loop is stored when a threshold voltage of the memory cells of the first page is higher than a first verification voltage(S311). A second program loop including a second program operation and a second program verification operation is repeated with regard to memory cells of a second page(S320).
申请公布号 KR20120043516(A) 申请公布日期 2012.05.04
申请号 KR20100104852 申请日期 2010.10.26
申请人 SK HYNIX INC. 发明人 CHOI, JEA WON
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
代理机构 代理人
主权项
地址