NITRIDE-BASED SEMICONDUCTOR SUBSTRATE HAVING HOLLOW MEMBER PATTERN AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A nitride semiconductor substrate which includes a hollow member pattern and a manufacturing method thereof are provided to include a lateral growth part on a buffer layer, thereby improving quality of a nitride semiconductor layer on a substrate. CONSTITUTION: A plurality of hollow member patterns(142) is arranged on a substrate(110). A nitride seed layer(160) is arranged between the hollow member patterns on the substrate. A nitride buffer layer(170) covers the hollow member pattern on the seed layer. The hollow member pattern is connected to the substrate in a first direction. The both ends of the hollow member pattern are opened in the first direction.