| 摘要 |
<p>1,174,361. Semi-conductor devices. RCA CORP. 10 Nov., 1967, No. 51215/67. Heading H1K. An IGFET comprises a high resistivity substrate on one surface of which, is a layer of semi-conductor material of one conductivity type throughout, spaced source and drain regions defining the ends of the channel within the layer, and a gate electrode extending adjacent to a portion only of the channel length and offset towards the source electrode. As shown, Fig. 2, the IGFET is produced by epitaxially depositing an N-type silicon layer 46 doped with arsenic or phosphorus on to a sapphire substrate 42, providing source and drain regions 48, 50 of higher conductivity, producing an oxide layer 52 by heating in steam, and providing source, drain and gate electrodes 56, 58, 60 respectively. The production of the oxide layer 52 generates an accumulation layer at the surface 54 of the layer 46 and this accumulation layer may be enhanced by heating the device in a hydrogen ambient before applying the electrodes. In a second embodiment, Fig. 3 (not shown), the substrate is of intrinsic or of high resistivity P-type silicon. A second insulated gate may be provided over the channel region.</p> |
