发明名称 |
HEAVILY DOPED PbSe WITH HIGH THERMOELECTRIC PERFORMANCE |
摘要 |
The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT > 1.3 was observed when n ? ~ 1.0x 1020 cm-3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe. |
申请公布号 |
WO2012058340(A2) |
申请公布日期 |
2012.05.03 |
申请号 |
WO2011US57933 |
申请日期 |
2011.10.26 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY;SNYDER, G. JEFFREY;WANG, HENG;PEI, YANZHONG |
发明人 |
SNYDER, G. JEFFREY;WANG, HENG;PEI, YANZHONG |
分类号 |
H01L35/14;H01L35/16;H01L35/20;H01L35/34 |
主分类号 |
H01L35/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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