| 摘要 |
A semiconductor device has: a semiconductor substrate; and an upper surface electrode laminated on an upper surface of the semiconductor substrate, wherein at least one portion of the upper surface electrode includes a first layer formed on an upper surface side of the semiconductor substrate, a second layer formed on an upper surface side of the first layer, a third layer in contact with the upper surface of the second layer, and a fourth layer formed on an upper surface side of the third layer. The first layer is a barrier metal layer. The second layer is an Al (aluminum) layer. The third layer is one of an Al—Si (aluminum-silicon alloy) layer, an Al—Cu (aluminum-copper alloy) layer and an Al—Si—Cu (aluminum-silicon-copper alloy) layer. The fourth layer is a solder joint layer.
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