| 摘要 |
A semiconductor device includes a semiconductor element. The semiconductor element comprises a first insulating film, a resistance changing layer, a first electrode, a buried layer, and a second electrode. The first electrode is formed within the opening so as to cover side and bottom surfaces of an inner wall of the opening and so as to include a recessed portion and is in contact with the resistance changing layer via the upper end thereof. The second electrode is formed on the resistance changing layer so as to interpose the resistance changing layer between the second electrode, and the upper end of the first electrode and the buried layer. The semiconductor element changes an electronic resistance between the first and second electrodes by reversibly forming a conductive bridge in the resistance changing layer between the upper end of the first electrode and the second electrode. |
