| 摘要 |
Disclosed is a method for treating semiconductor wafer including: providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy2O3, Pr2O3, Ce2O3) applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed. |
