METHOD OF FORMING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming a semiconductor device is provided to improve picture quality of a digital image by including a junction profile of a photodiode area and a feature size of a transfer gate structure. CONSTITUTION: A semiconductor substrate(2) including a first area and a second area is prepared. A first insulation layer(15) and a first conductive layer(22) are formed on the semiconductor substrate. A first structure(53) is formed on the first conductive layer within the first area. A second structure(55) is formed on the first conductive layer within the second area. A foreign material diffusion area(75) is formed by injecting foreign material ion within the semiconductor substrate.