| 摘要 |
<p>PURPOSE: A resist pattern modifying material, a resist pattern forming method, and a method for manufacturing a semiconductor device are provided to cover the surface of resist patterns after the resist patterns are formed. CONSTITUTION: A resist pattern modifying material includes at least C4 to C11 linear alkane diol and water. The carbon number of the linear alkane diol is capable of being between 5 and 9. The linear alkane diol is compound represented by chemical formula 1. In chemical formula 1, n is the integer of 2 to 6. The content of the linear alkane diol is 0.01 to 5 parts by weight based on 100 parts by weight of water. The resist pattern modifying material further includes water-soluble resin and/or surfactant. The water-soluble resin is one or more of polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate, polyvinyl pyrrolidone, and resin containing the same. The content of the water-soluble resin is 0.001 to 10 mass by weight based on 100 mass by weight of water.</p> |
