发明名称 |
Semiconductor Device and Its Manufacturing Method |
摘要 |
A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel portion and a second wiring in the driving circuit are formed by patterning a second conductive layer. The first wiring, a channel formation region of the semiconductor layer, and the second wiring are overlapped with each other.
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申请公布号 |
US2012107985(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113280439 |
申请日期 |
2011.10.25 |
申请人 |
YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L33/08;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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