发明名称 Semiconductor Device and Its Manufacturing Method
摘要 A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel portion and a second wiring in the driving circuit are formed by patterning a second conductive layer. The first wiring, a channel formation region of the semiconductor layer, and the second wiring are overlapped with each other.
申请公布号 US2012107985(A1) 申请公布日期 2012.05.03
申请号 US201113280439 申请日期 2011.10.25
申请人 YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 H01L33/08;G02F1/1368;H01L21/336;H01L29/786 主分类号 H01L33/08
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