| 摘要 |
<p>The disclosed organic thin film transistor has excellent flexibility and durability, excellent device characteristics, and a bottom gate-bottom contact structure with an easily enlargeable surface area. The organic thin film transistor has a bottom gate-bottom contact structure having source and drain electrodes comprising a first conductive layer and a second conductive layer, wherein the first conductive layer contains one or more materials selected from the group consisting of tungsten oxide, silver oxide, copper oxide, zinc oxide, silver salt, silver and copper, and the second conductive layer contains one or more materials selected from the group consisting of Ag, Al, Au, Cd, Co, Cr, Cu, Fe, Mg, Mo, Ni, Pb, Pd, Pt, Sn, Ta, Ti, V, W, Zn, Zr, or an alloy containing any of these metals.</p> |
