<p>A storage device in which stored data can be held even when power is not supplied, and stored data can be read at high speed without turning on a transistor included in a storage element is provided. In the storage device, a memory cell having a transistor including an oxide semiconductor layer as a channel region and a storage capacitor is electrically connected to a capacitor to form a node. The voltage of the node is boosted up in accordance with stored data by capacitive coupling through a storage capacitor and the potential is read with an amplifier circuit to distinguish data.</p>
申请公布号
WO2012057296(A1)
申请公布日期
2012.05.03
申请号
WO2011JP74884
申请日期
2011.10.21
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MATSUBAYASHI, DAISUKE;OHNUKI, TATSUYA