发明名称 STORAGE DEVICE
摘要 <p>A storage device in which stored data can be held even when power is not supplied, and stored data can be read at high speed without turning on a transistor included in a storage element is provided. In the storage device, a memory cell having a transistor including an oxide semiconductor layer as a channel region and a storage capacitor is electrically connected to a capacitor to form a node. The voltage of the node is boosted up in accordance with stored data by capacitive coupling through a storage capacitor and the potential is read with an amplifier circuit to distinguish data.</p>
申请公布号 WO2012057296(A1) 申请公布日期 2012.05.03
申请号 WO2011JP74884 申请日期 2011.10.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MATSUBAYASHI, DAISUKE;OHNUKI, TATSUYA 发明人 MATSUBAYASHI, DAISUKE;OHNUKI, TATSUYA
分类号 H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
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