发明名称 |
ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI |
摘要 |
An object of the present invention is to provide an electrolytic copper plating solution which can suppress, upon electrolytic copper plating on a copper seed layer during fabrication of ULSI copper microwiring (damascene copper wiring) having trends to further miniaturization, dissolution of the copper seed layer and accordingly can suppress occurrence of voids on the inner wall of vias/trenches. The present invention provides an electrolytic copper plating solution for filling for forming microwiring for ULSI, characterized in that it has a pH of 1.8 or higher and 3.0 or lower. The electrolytic copper plating solution preferably comprises a saturated carboxylic acid having 1 or more and 4 or less carbon atoms at 0.01 mol/L or more and 2.0 mol/L or less.
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申请公布号 |
US2012103820(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201013378529 |
申请日期 |
2010.06.22 |
申请人 |
SEKIGUCHI JUNNOSUKE;TAKAHASHI HIROFUMI;AIBA AKIHIRO |
发明人 |
SEKIGUCHI JUNNOSUKE;TAKAHASHI HIROFUMI;AIBA AKIHIRO |
分类号 |
C25D3/38;C25D5/02;C25D7/06 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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