| 摘要 |
1,228,916. Sputtering Ta and silica. PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES Ltd. May 9, 1968, [May 12, 1967], No.22030/68. Heading C7F. [Also in Division H1]. A resistive layer 2Á thick consisting of a mixture of tantalum and silica is applied to a semiconductor device body by R. F. sputtering using the apparatus shown. The source is a tantalum plate 22 with a quartz disc 24 bolted to it, the layer resistivity being varied by altering the ratio r 2 /r 1 . The plate is capacitively coupled via insulation 28 to a 12Mc/s supply and the support 25 for the silicon body earthed. Sputtering is effected under an argon pressure of 10<SP>-2</SP>mm. |
