发明名称 BROAD AREA LASER HAVING AN EPITAXIAL STACK OF LAYERS AND METHOD FOR THE PRODUCTION THEREOF
摘要 A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 mum.
申请公布号 KR20120043037(A) 申请公布日期 2012.05.03
申请号 KR20127005343 申请日期 2010.06.28
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 LELL ALFRED;BRUENINGHOFF STEFANIE
分类号 H01S5/40;H01S5/22 主分类号 H01S5/40
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