COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A COMPOUND SEMICONDUCTOR
摘要
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer; and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
申请公布号
WO2012057517(A2)
申请公布日期
2012.05.03
申请号
WO2011KR08019
申请日期
2011.10.26
申请人
LG SILTRON INC.;KUMOH NATIONAL INSTITUTE OF TECHNOLOGY INDUSTRY-ACADEMIC COOPERATION FOUNDATION;AN, SUNG JIN;LEE, DONG GUN;KIM, SEOK HAN