发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A P-CHANNEL TYPE MOS TRANSMITTER |
摘要 |
A method of manufacturing a semiconductor device including a stacked gate type nonvolatile memory cell and a p-channel type first transistor, includes: forming a gate insulating film of the first transistor on a semiconductor substrate; forming a tunnel insulating film of the stacked gate type nonvolatile memory cell on the semiconductor substrate; forming a first conductive layer containing an n-type impurity on the tunnel insulating film and the gate insulating film; and implanting p-type impurity ions to a region of the first conductive layer for forming the first transistor to turn the region of the first conductive layer into a p-type region. |
申请公布号 |
US2012108022(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113335167 |
申请日期 |
2011.12.22 |
申请人 |
ANEZAKI TORU;OKABE KENICHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
ANEZAKI TORU;OKABE KENICHI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|