发明名称 |
SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS |
摘要 |
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal. |
申请公布号 |
US2012103249(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201013255151 |
申请日期 |
2010.03.25 |
申请人 |
GUPTA AVINASH K.;ZWIEBACK ILYA;SEMENAS EDWARD;GETKIN MARCUS L.;FLYNN PATRICK D.;II-VI INCORPORATED |
发明人 |
GUPTA AVINASH K.;ZWIEBACK ILYA;SEMENAS EDWARD;GETKIN MARCUS L.;FLYNN PATRICK D. |
分类号 |
C30B23/02;C30B25/02;C30B25/20 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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