发明名称 |
CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL |
摘要 |
<p>This ceramic material contains magnesium, aluminum, oxygen and nitrogen as main components, and has, as the main phase, a crystalline phase of an MgO-AlN solid solution wherein aluminum nitride is solid-solved in magnesium oxide. It is preferable that the MgO-AlN solid solution has XRD peaks of the (200) plane and the (220) plane, as obtained using a CuKa ray, at 2? = 42.9-44.8°, 62.3-65.2° which are between the peak of cubic crystals of magnesium oxide and the peak of cubic crystals of aluminum nitride. It is more preferable that the MgO-AlN solid solution has an XRD peak of the (111) plane at 2? = 36.9-39° which is between the peak of cubic crystals of magnesium oxide and the peak of cubic crystals of aluminum nitride.</p> |
申请公布号 |
WO2012056876(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
WO2011JP73330 |
申请日期 |
2011.10.11 |
申请人 |
NGK INSULATORS, LTD.;WATANABE, MORIMICHI;JINDO, ASUMI;KATSUDA, YUJI;SATO, YOSUKE;ISODA, YOSHINORI |
发明人 |
WATANABE, MORIMICHI;JINDO, ASUMI;KATSUDA, YUJI;SATO, YOSUKE;ISODA, YOSHINORI |
分类号 |
C04B35/581;C04B35/04;H01L21/3065;H01L21/31 |
主分类号 |
C04B35/581 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|