发明名称 CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL
摘要 <p>This ceramic material contains magnesium, aluminum, oxygen and nitrogen as main components, and has, as the main phase, a crystalline phase of an MgO-AlN solid solution wherein aluminum nitride is solid-solved in magnesium oxide. It is preferable that the MgO-AlN solid solution has XRD peaks of the (200) plane and the (220) plane, as obtained using a CuKa ray, at 2? = 42.9-44.8°, 62.3-65.2° which are between the peak of cubic crystals of magnesium oxide and the peak of cubic crystals of aluminum nitride. It is more preferable that the MgO-AlN solid solution has an XRD peak of the (111) plane at 2? = 36.9-39° which is between the peak of cubic crystals of magnesium oxide and the peak of cubic crystals of aluminum nitride.</p>
申请公布号 WO2012056876(A1) 申请公布日期 2012.05.03
申请号 WO2011JP73330 申请日期 2011.10.11
申请人 NGK INSULATORS, LTD.;WATANABE, MORIMICHI;JINDO, ASUMI;KATSUDA, YUJI;SATO, YOSUKE;ISODA, YOSHINORI 发明人 WATANABE, MORIMICHI;JINDO, ASUMI;KATSUDA, YUJI;SATO, YOSUKE;ISODA, YOSHINORI
分类号 C04B35/581;C04B35/04;H01L21/3065;H01L21/31 主分类号 C04B35/581
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