| 摘要 |
PURPOSE: A semiconductor device formation method is provided to improve yield of a semiconductor device by easily controlling a polishing degree of the edge part and the central part of a wafer. CONSTITUTION: A part which detects a polishing degree on a wafer includes a region 1(1) to a region 9(9). The region 1 to the region 9 arranges a proximate region to the edge part of the wafer. A region 5(5) arranges the central part of the wafer. A region 2(2), a region 3(3), and a region 4(4) are arranged between the region 1 and the region 5. A region 6(6), a region 7(7), and a region 8(8) are arranged between the region 5 and the region 9.
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