HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR

摘要

An integrated circuit (100) includes an extended drain MOS transistor (102) with parallel alternating active gap drift regions and field gap drift regions. The extended drain MOS transistor includes a gate having field plates over the field gap drift regions. The extended drain MOS transistor may be formed in a symmetric nested configuration. A process for forming an integrated circuit containing an extended drain MOS transistor provides parallel alternating active gap drift regions and field gap drift regions with a gate having field plates over the field gap drift regions.