REFERENCE CELLS FOR SPIN TORQUE BASED MEMORY DEVICE
摘要
A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit when an error is detected using error correction code (ECC) and writing each corresponding reference cells to an original memory state thereof.
申请公布号
WO2011084905(A3)
申请公布日期
2012.05.03
申请号
WO2011US20009
申请日期
2011.01.03
申请人
INTERNATIONAL BUSINESS MACHINES CORP.;DEBROSSE, JOHN, K.;WORLEDGE, DANIEL, C.