发明名称 NONVOLATILE MEMORY APPARATUS, REPAIR CIRCUIT FOR THE SAME, AND METHOD FOR READING CODE ADDRESSABLE MEMORY DATA
摘要 A nonvolatile memory apparatus includes: a memory cell array including a plurality of planes and configured to store a plurality of code addressable memory (CAM) data in independent planes. A redundancy cell array is configured to replace the memory cell array and a CAM data read unit is configured to read the plurality of CAM data from the respective planes in parallel, in response to a CAM data read command, and store the read data.
申请公布号 US2012106224(A1) 申请公布日期 2012.05.03
申请号 US20100983170 申请日期 2010.12.31
申请人 LEE SANG KYU;HYNIX SEMICONDUCTOR INC. 发明人 LEE SANG KYU
分类号 G11C15/00;G11C29/04 主分类号 G11C15/00
代理机构 代理人
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