发明名称 SOLID-STATE IMAGE CAPTURING ELEMENT AND DRIVING METHOD FOR THE SAME, METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURING ELEMENT, AND ELECTRONIC INFORMATION DEVICE
摘要 PURPOSE: A solid imaging device, a driving method thereof, a manufacturing method of the solid imaging device, and an electronic information device are provided to completely transmit signal charges from a photoelectric conversion and accumulation part to a charge detection part, thereby acquiring a high quality image. CONSTITUTION: A photodiode region comprises a first conductivity type semiconductor region and a second conductivity type semiconductor pinning layer. The first conductivity type semiconductor region arranges a photoelectric conversion and accumulation part(4). The second conductivity type semiconductor pinning layer separates the photoelectric conversion and accumulation part from the surface of a semiconductor substrate. One end of a gate electrode overlaps one end of the photoelectric conversion and accumulation part. A charge detection part(13) is arranged adjacent to the other end of the gate electrode as a first conductivity type drain region.
申请公布号 KR20120042815(A) 申请公布日期 2012.05.03
申请号 KR20120038086 申请日期 2012.04.12
申请人 SHARP KABUSHIKI KAISHA 发明人 KONISHI TAKEFUMI
分类号 H01L27/146;H04N5/335;H04N5/365;H04N5/367;H04N5/369;H04N5/374;H04N5/3745 主分类号 H01L27/146
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