| 摘要 |
<p>Provided is a technique for producing polycrystalline silicon whereby a sufficient joint strength between a silicon core wire and a core wire holder can be established within a short period of time and, as a result, the growth rate control period in the early reaction stage can be shortened. A core wire holder (20) having a truncated conical slant at one end, wherein an opening (22) is formed in said end to provide a hollow cavity (21) into which a silicon core wire (5) is inserted and held. On the surface of the silicon core wire (5), polycrystalline silicon (6) is vapor-deposited by the Siemens process so that a polycrystalline silicon rod is formed. In the truncated conical slant close to the opening (22), circular slits (23a-23c), which are aligned from the outer peripheral face around the opening toward the hollow cavity (21), are formed as heat-insulating layers. These circular slits act as heat-insulating parts (heat-insulating layers), i.e., prevent the leakage of conductive heat and radiation heat from the silicon core wire (5) or the polycrystalline silicon (6) to a metallic electrode and heat one end of the core wire holder (20).</p> |
